K4S561633F-ZL75

BGA54, 268,435,456 bits, synchronous, high data rate, Dynamic RAM, 3.0V, 3.3V

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Price:: US $1.50~2.50 / piece [Get Latest Price]

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	US $1.50~2.50

PartNumber:: K4S561633F-ZL75

Brand:: Samsung semiconductor - SAMSUNG | Pack: BGA | D/C: 07+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2011-12-09

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Part Number:K4S561633F-ZL75
US $1.50 - 2.50
EKY-160ELL121MF11D

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Product Summary

The K4S561633F-ZL75 is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S561633F-ZL75 to be useful for a variety of high bandwidth, high performance memory system applications.

Parametrics

K4S561633F-ZL75 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss VDD, VDDQ: -1.0 ~ 4.6 V; (3)Storage temperature TSTG: -55 ~ +150 ℃; (4)Power dissipation PD: 1.0 W; (5)Short circuit current IOS: 50 mA.

Features

K4S561633F-ZL75 features: (1)3.0V and 3.3V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system ; (7)clock ; (8)Burst read single-bit write operation; (9)Special Function Support; (10)DQM for masking; (11)Auto refresh; (12)64ms refresh period (8K cycle); (13)Commercial Temperature Operation (-25 ~ 70℃); (14)Extended Temperature Operation (-25 ~ 85℃); (15)54Balls BOC with 0.8mm ball pitch ( -X : Leaded, -Z : Lead Free).