Product Summary

The IRLML6401TRPBF is a P-Channel MOSFET from International Rectifier utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRLML6401TRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

Parametrics

IRLML6401TRPBF absolute maximum ratings: (1)VDS, Drain- Source Voltage: -12 V; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ -4.5V: -4.3A; (3)ID @ TA= 70℃, Continuous Drain Current, VGS @ -4.5V: -3.4 A; (4)IDM, Pulsed Drain Current: -34A; (5)PD @TA = 25℃, Power Dissipation: 1.3W; (6)PD @TA = 70℃, Power Dissipation: 0.8W; (7)Linear Derating Factor: 0.01 W/℃; (8)EAS, Single Pulse Avalanche Energy: 33 mJ; (9)VGS, Gate-to-Source Voltage: ± 8.0 V; (10)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150℃.

Features

IRLML6401TRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching; (7)1.8V Gate Rated.

Diagrams

IRLML6401TRPBF pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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